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Organic optoelectronic devices-flexibility versus performance

Identifieur interne : 003B66 ( Main/Repository ); précédent : 003B65; suivant : 003B67

Organic optoelectronic devices-flexibility versus performance

Auteurs : RBID : Pascal:11-0422471

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English descriptors

Abstract

In this paper, we discuss the effect of flexible substrates on the characteristics of two organic optoelectronic devices, namely P3HT:PCBM-based photovoltaic bulk heterojunctions and pentacene-based phototransistors. In addition, we have developed anode materials deposited by ion beam sputtering, a technique which satisfies the low temperature deposition requirements associated with the use of plastic substrates. The anode materials consisted of indium tin oxide (ITO) and ITO/metal/ITO tri-layers. The use of tri-layer anodes in P3HT:PCBM-based solar cells resulted in an increase in the fill factor and the power conversion efficiency reached a value of 2% with an ITO(70 nm)/Ag(14 nm)/ITO(70 nm) anode deposited on a polyphthalate carbonate substrate. In the case of phototransistors, a photosensitivity of 1.6 × 104 under illumination at 365 nm (with a power intensity of 7 mW/cm2) was obtained in the off-state of the transistor. We have fine-tuned the anode structure and deposition/annealing conditions towards flexible organic devices and optimal device characteristics.

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<div type="abstract" xml:lang="en">In this paper, we discuss the effect of flexible substrates on the characteristics of two organic optoelectronic devices, namely P3HT:PCBM-based photovoltaic bulk heterojunctions and pentacene-based phototransistors. In addition, we have developed anode materials deposited by ion beam sputtering, a technique which satisfies the low temperature deposition requirements associated with the use of plastic substrates. The anode materials consisted of indium tin oxide (ITO) and ITO/metal/ITO tri-layers. The use of tri-layer anodes in P3HT:PCBM-based solar cells resulted in an increase in the fill factor and the power conversion efficiency reached a value of 2% with an ITO(70 nm)/Ag(14 nm)/ITO(70 nm) anode deposited on a polyphthalate carbonate substrate. In the case of phototransistors, a photosensitivity of 1.6 × 10
<sup>4</sup>
under illumination at 365 nm (with a power intensity of 7 mW/cm
<sup>2</sup>
) was obtained in the off-state of the transistor. We have fine-tuned the anode structure and deposition/annealing conditions towards flexible organic devices and optimal device characteristics.</div>
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<sup>4</sup>
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<sup>2</sup>
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